Inicio » Uncategorized » Back to basics: The real parameters of the diode and the design of ultra-low-voltage rectifiers

Back to basics: The real parameters of the diode and the design of ultra-low-voltage rectifiers

El capítulo Uruguay de la IEEE Circuits & Systems Society, invita a su actividad de cierre del año con la conferencia:
Dr.Carlos Galup-Montoro
Universidad Federal de Santa Catarina
Jueves 17 de Noviembre – 10:15 hs.
Facultad de Ingeniería – UdelaR. Av.Julio Herrera y Reissig 565 – Salón 705
Asistencia libre, por consultas y registro:
Abstract: The analysis techniques of nonlinear circuits in introductory textbooks are not appropriate when the available voltages are not larger than a few hundred milivolts. The classical constant-voltage-drop model of the Si diode, for example, which assumes that the voltage drop in a forward biased diode is, for example, 600 mV, is obviously useless for very low voltage circuits. This talk highlights some deficiencies of the classical model of the basic rectifier circuit and presents a simple analytical model of the basic rectifier circuit for very low voltage operation based on the Shockley (exponential) law of the diode. The main alternatives for the implementation of diodes in CMOS technologies and the calculation of the equivalent diode parameters for low voltage operation are summarized.
Carlos Galup: He studied engineering sciences at the University of the Republic, Montevideo, Uruguay, and electronic engineering at the National Polytechnic School of Grenoble (INPG), France. He received an engineering degree in electronics in 1979 and a doctorate degree in 1982, both from INPG. From 1982 to 1989 he was with the University of São Paulo, Brazil, where he was engaged in junction field effect transistor (JFET) fabrication and analog circuit design. Since 1990, he has been with the Electrical Engineering Department, Federal University of Santa Catarina, Florianópolis, Brazil where he is now a professor. In the second semester of the academic year 1997/98 he was a research associate with the Analog Mixed Signal Group, Texas A&M University. In the academic year 2008 /09 2009 he was a visiting scholar at UC Berkeley.He is coauthor of the textbooks: “MOSFET Modeling for Circuit Analysis and Design”, World Scientific, 2007 and “CMOS Analog Design Using All-Region MOSFET Modeling”, Cambridge University Press, 2010.